Carregant...
Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach
[Image: see text] We demonstrate the fabrication of sub-20 nm gate-all-around silicon (Si) nanowire field effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a block-copolymer-assisted hard mask approach was utilized using a topographically patterned substrat...
Guardat en:
| Publicat a: | ACS Nano |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
American
Chemical Society
2021
|
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8291765/ https://ncbi.nlm.nih.gov/pubmed/34042425 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsnano.0c09232 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|