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High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices
[Image: see text] High-quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize because of the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks...
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| Publicado en: | ACS Appl Nano Mater |
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| Autores principales: | , , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
American Chemical
Society
2021
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| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8291043/ https://ncbi.nlm.nih.gov/pubmed/34308268 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsanm.1c00734 |
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