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Polarization-insensitive GaN metalenses at visible wavelengths
The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning...
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| Vydáno v: | Sci Rep |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group UK
2021
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8282812/ https://ncbi.nlm.nih.gov/pubmed/34267286 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-94176-7 |
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