Caricamento...
Polarization-insensitive GaN metalenses at visible wavelengths
The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning...
Salvato in:
| Pubblicato in: | Sci Rep |
|---|---|
| Autori principali: | , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group UK
2021
|
| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8282812/ https://ncbi.nlm.nih.gov/pubmed/34267286 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-94176-7 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|