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Chemical Vapor Deposition of N-Doped Graphene through Pre-Implantation of Nitrogen Ions for Long-Term Protection of Copper

Nitrogen-doped graphene (NG) was synthesized through the chemical vapor deposition (CVD) of graphene on Cu substrates, which were pre-implanted with N ions by the ion implantation method. The pre-implanted N ions in the Cu substrate could dope graphene by the substitution of C atoms during the CVD g...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Materials (Basel)
Päätekijät: Han, Luoqiao, Dong, Lei, Chen, Haiyan, Yang, Shuai, Yuan, Aiheng, Guan, Ran, Yan, Hong, Wu, Jing, Zhang, Bo, Li, Dejun, Luo, Birong
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI 2021
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC8269794/
https://ncbi.nlm.nih.gov/pubmed/34279322
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14133751
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