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Developing Single Layer MOS Quantum Dots for Diagnostic Qubits
The design, fabrication and characterization of single metal gate layer, metal-oxide-semiconductor (MOS) quantum dot devices robust against dielectric breakdown are presented as prototypes for future diagnostic qubits. These devices were developed as a preliminary solution to a longer term goal of a...
שמור ב:
| הוצא לאור ב: | J Vac Sci Technol B Nanotechnol Microelectron |
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| Main Authors: | , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
2021
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8269032/ https://ncbi.nlm.nih.gov/pubmed/34249479 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1116/6.0000549 |
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