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A Schottky-Type Metal-Semiconductor-Metal Al(0.24)Ga(0.76)N UV Sensor Prepared by Using Selective Annealing
Asymmetric metal-semiconductor-metal (MSM) aluminum gallium nitride (AlGaN) UV sensors with 24% Al were fabricated using a selective annealing technique that dramatically reduced the dark current density and improved the ohmic behavior and performance compared to a non-annealed sensor. Its dark curr...
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| 出版年: | Sensors (Basel) |
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| 主要な著者: | , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2021
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8235189/ https://ncbi.nlm.nih.gov/pubmed/34205761 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s21124243 |
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