A carregar...
Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM
In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. HfOx films with different S-doping contents are achieved by atmospheric pressure chemical vapor deposition (APCVD) u...
Na minha lista:
| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8233777/ https://ncbi.nlm.nih.gov/pubmed/34208616 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14123330 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|