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Large-Area, Two-Dimensional MoS(2) Exfoliated on Gold: Direct Experimental Access to the Metal–Semiconductor Interface
[Image: see text] Two-dimensional semiconductors such as MoS(2) are promising for future electrical devices. The interface to metals is a crucial and critical aspect for these devices because undesirably high resistances due to Fermi level pinning are present, resulting in unwanted energy losses. To...
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| Publicado no: | ACS Omega |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Chemical Society
2021
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8223410/ https://ncbi.nlm.nih.gov/pubmed/34179637 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.1c01570 |
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