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Extraction of Preisach model parameters for fluorite-structure ferroelectrics and antiferroelectrics
Flourite-structure ferroelectrics (FEs) and antiferroelectrics (AFEs) such as HfO(2) and its variants have gained copious attention from the semiconductor community, because they enable complementary metal-oxide-semiconductor (CMOS)-compatible platforms for high-density, high-performance non-volatil...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8203701/ https://ncbi.nlm.nih.gov/pubmed/34127695 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-91492-w |
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