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Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
Resistive switching memory that uses halide perovskites (HP) has been considered as next-generation storage devices due to low operation voltage and high on/off ratio. However, the memory still faces challenges for stable operation with fast switching speed, which hinders the practical application....
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| Publicado en: | Nat Commun |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group UK
2021
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8192534/ https://ncbi.nlm.nih.gov/pubmed/34112776 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-021-23871-w |
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