Isoelectronic perturbations to f-d-electron hybridization and the enhancement of hidden order in URu(2)Si(2)

Electrical resistivity measurements were performed on single crystals of URu(2–x)Os(x)Si(2) up to x = 0.28 under hydrostatic pressure up to P = 2 GPa. As the Os concentration, x, is increased, 1) the lattice expands, creating an effective negative chemical pressure P(ch)(x); 2) the hidden-order (HO)...

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Publicado en:Proc Natl Acad Sci U S A
Autores principales: Wolowiec, Christian T., Kanchanavatee, Noravee, Huang, Kevin, Ran, Sheng, Breindel, Alexander J., Pouse, Naveen, Sasmal, Kalyan, Baumbach, Ryan E., Chappell, Greta, Riseborough, Peter S., Maple, M. Brian
Formato: Artigo
Lenguaje:Inglês
Publicado: National Academy of Sciences 2021
Materias:
Physical Sciences
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC8157968/
https://ncbi.nlm.nih.gov/pubmed/33975950
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.2026591118
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