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A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors
Theoretical study and software simulation on the sensitivity of silicon nanowires (SiNWs) field effect transistor (FET) sensors in terms of surface-to-volume ratio, depletion ratio, surface state and lattice quality are carried out. Generally, SiNWs-FET sensors with triangular cross-sections are mor...
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| Gepubliceerd in: | Biosensors (Basel) |
|---|---|
| Hoofdauteurs: | , , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
MDPI
2021
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8071106/ https://ncbi.nlm.nih.gov/pubmed/33920811 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/bios11040121 |
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