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Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the...

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Detalhes bibliográficos
Publicado no:Sci Adv
Main Authors: Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S., Goswami, Aranya, Guo, Taozhi, Chang, Yu-Hao, Young, Elliot, Fedorov, Alexei V., Read, Dan, Janotti, Anderson, Palmstrøm, Chris J.
Formato: Artigo
Idioma:Inglês
Publicado em: American Association for the Advancement of Science 2021
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC8046380/
https://ncbi.nlm.nih.gov/pubmed/33853778
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.abe8971
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