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Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon
Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acqui...
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| Udgivet i: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2021
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8037179/ https://ncbi.nlm.nih.gov/pubmed/33801726 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14071651 |
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