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Electric-Field-Effect Spin Switching with an Enhanced Number of Highly Polarized Electron and Photon Spins Using p-Doped Semiconductor Quantum Dots
[Image: see text] Electric-field-effect spin switching with an enhanced number of highly polarized electron and photon spins has been demonstrated using p-doped semiconductor quantum dots (QDs). Remote p-doping in InGaAs QDs tunnel-coupled with an InGaAs quantum well (QW) significantly increased the...
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| Publicado no: | ACS Omega |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Chemical Society
2021
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8015086/ https://ncbi.nlm.nih.gov/pubmed/33817516 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.1c00377 |
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