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Analysis of Threshold Voltage Shift for Full V(GS)/V(DS)/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical e...
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| Vydáno v: | Micromachines (Basel) |
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| Hlavní autoři: | , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2021
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8003586/ https://ncbi.nlm.nih.gov/pubmed/33808738 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12030327 |
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