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Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe,...
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| Publié dans: | Nanomaterials (Basel) |
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| Auteurs principaux: | , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI
2021
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8003543/ https://ncbi.nlm.nih.gov/pubmed/33808713 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11030788 |
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