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Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Nanomaterials (Basel)
Päätekijät: Rothman, Amnon, Maniš, Jaroslav, Dubrovskii, Vladimir G., Šikola, Tomáš, Mach, Jindřich, Joslevich, Ernesto
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI 2021
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC8002117/
https://ncbi.nlm.nih.gov/pubmed/33802317
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11030624
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