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Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors
Twist-engineering of the electronic structure in van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore...
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| Publicado no: | Nat Commun |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7946969/ https://ncbi.nlm.nih.gov/pubmed/33692339 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-021-21547-z |
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