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Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heteroj...

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Detalhes bibliográficos
Publicado no:Nanomaterials (Basel)
Main Authors: Patil, Harshada, Kim, Honggyun, Rehman, Shania, Kadam, Kalyani D., Aziz, Jamal, Khan, Muhammad Farooq, Kim, Deok-kee
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2021
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7912748/
https://ncbi.nlm.nih.gov/pubmed/33535529
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11020359
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