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NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe(2) heterojunction diode
Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe(2) van der w...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7878902/ https://ncbi.nlm.nih.gov/pubmed/33574562 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-83187-z |
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