Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data processing to overcome the von Neumann bottleneck. In PCMs, data storage is driven by thermal excitation. However, there is limited research regarding...

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Publicado no:Nat Commun
Main Authors: Aryana, Kiumars, Gaskins, John T., Nag, Joyeeta, Stewart, Derek A., Bai, Zhaoqiang, Mukhopadhyay, Saikat, Read, John C., Olson, David H., Hoglund, Eric R., Howe, James M., Giri, Ashutosh, Grobis, Michael K., Hopkins, Patrick E.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2021
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7858634/
https://ncbi.nlm.nih.gov/pubmed/33536411
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-20661-8
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