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Sequential conversion from line defects to atomic clusters in monolayer WS(2)
Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS(2) and WS(2), S vacancies are formed prefe...
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| Publicado no: | Appl Microsc |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer Singapore
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7818298/ https://ncbi.nlm.nih.gov/pubmed/33580451 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s42649-020-00047-2 |
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