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Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications
In this paper, the poly-Si nanowire (NW) field-effect transistor (FET) sensor arrays were fabricated by adopting low-temperature annealing (600 °C/30 s) and feasible spacer image transfer (SIT) processes for future monolithic three-dimensional integrated circuits (3D-ICs) applications. Compared with...
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| Yayımlandı: | Nanomaterials (Basel) |
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| Asıl Yazarlar: | , , , , , , , , , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI
2020
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7763022/ https://ncbi.nlm.nih.gov/pubmed/33322344 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10122488 |
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