Lanean...
High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures
Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH(3)) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared wi...
Gorde:
| Argitaratua izan da: | Nanomaterials (Basel) |
|---|---|
| Egile Nagusiak: | , , , , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI
2020
|
| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7762107/ https://ncbi.nlm.nih.gov/pubmed/33291493 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10122434 |
| Etiketak: |
Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|