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Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires

The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic pro...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Front Chem
Päätekijät: Jiang, Nian, Joyce, Hannah J., Parkinson, Patrick, Wong-Leung, Jennifer, Tan, Hark Hoe, Jagadish, Chennupati
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Frontiers Media S.A. 2020
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC7750184/
https://ncbi.nlm.nih.gov/pubmed/33365302
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3389/fchem.2020.607481
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