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Investigation of AlGaN/GaN HFET and VO(2) Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers
The static and dynamic deflection transducing performances of piezotransistive AlGaN/GaN heterojunction field effect transistors (HFET) and piezoresistive VO(2) thin films, fabricated on GaN microcantilevers of similar dimensions, were investigated. Deflection sensitivities were tuned with the gate...
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| Veröffentlicht in: | Micromachines (Basel) |
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| Hauptverfasser: | , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI
2020
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7570367/ https://ncbi.nlm.nih.gov/pubmed/32962251 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11090875 |
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