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Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes
Two types of single-photon avalanche diodes (SPADs) with different diameters are investigated regarding their avalanche behavior. SPAD type A was designed in standard 0.35-µm complementary metal-oxide-semiconductor (CMOS) including a 12-µm thick p(-) epi-layer with diameters of 50, 100, 200, and 400...
Tallennettuna:
| Julkaisussa: | Micromachines (Basel) |
|---|---|
| Päätekijät: | , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI
2020
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7569859/ https://ncbi.nlm.nih.gov/pubmed/32961756 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11090869 |
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