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Suppression of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in Different Conditions
Zinc oxide (ZnO) has drawn much attention due to its excellent optical and electrical properties. In this study, ZnO film was prepared by a high-deposition-rate spatial atomic layer deposition (ALD) and subjected to a post-annealing process to suppress the intrinsic defects and improve the crystalli...
Gorde:
| Argitaratua izan da: | Materials (Basel) |
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| Egile Nagusiak: | , , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI
2020
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7558328/ https://ncbi.nlm.nih.gov/pubmed/32899677 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13183910 |
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