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Thermal conductivity and its relation to atomic structure for symmetrical tilt grain boundaries in silicon
We perform a systematic study of thermal resistance/conductance of tilt grain boundaries (GBs) in Si using classical molecular dynamics. The GBs studied are naturally divided into three groups according to the structural units forming the GB core. We find that, within each group, the GB thermal cond...
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| Publicado no: | Phys Rev Mater |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7552891/ https://ncbi.nlm.nih.gov/pubmed/33062914 |
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