Enhanced UV Emission of GaN Nanowires Functionalized by Wider Band Gap Solution-Processed p-MnO Quantum Dots

[Image: see text] GaN-based UV light-emitting devices suffer from low efficiency. To mitigate this issue, we hybridized GaN nanowires (NWs) grown on Si substrates by plasma-assisted molecular beam epitaxy with solution-processed p-type MnO quantum dots (QDs) characterized by a wider band gap (∼5 eV)...

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Argitaratua izan da:ACS Appl Mater Interfaces
Egile Nagusiak: Almalawi, Dhaifallah, Lopatin, Sergei, Mitra, Somak, Flemban, Tahani, Siladie, Alexandra-Madalina, Gayral, Bruno, Daudin, Bruno, Roqan, Iman S.
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: American Chemical Society 2020
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC7497627/
https://ncbi.nlm.nih.gov/pubmed/32623885
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.0c07029
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