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Ultrafast spatiotemporal photocarrier dynamics near GaN surfaces studied by terahertz emission spectroscopy

Gallium nitride (GaN) is a promising wide-bandgap semiconductor, and new characterization tools are needed to study its local crystallinity, carrier dynamics, and doping effects. Terahertz (THz) emission spectroscopy (TES) is an emerging experimental technique that can probe the ultrafast carrier dy...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Veröffentlicht in:Sci Rep
Hauptverfasser: Yamahara, Kota, Mannan, Abdul, Kawayama, Iwao, Nakanishi, Hidetoshi, Tonouchi, Masayoshi
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Publishing Group UK 2020
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7471959/
https://ncbi.nlm.nih.gov/pubmed/32884079
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-71728-x
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