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Resistive switching characteristics of carbon nitride supported manganese oxysulfide: an evidence for the sweep dependent transformation of polarity
As part of a program to investigate the materials for resistive random access memory (ReRam) applications, a study has been conducted using embedded manganese oxysulfide (MOS) nanoparticles on the thin film of carbon nitride (CN). A high-temperature in-situ route was employed to synthesis CN-MOS com...
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| Foilsithe in: | Sci Rep |
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| Main Authors: | , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
Nature Publishing Group UK
2020
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7459303/ https://ncbi.nlm.nih.gov/pubmed/32868806 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-71313-2 |
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