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Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation
A review and perspective is presented of the classical, semi-classical and fully quantum routes to the simulation of electro-thermal phenomena in ultra-scaled silicon nanowire field-effect transistors. It is shown that the physics of ultra-scaled devices requires at least a coupled electron quantum...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7435733/ https://ncbi.nlm.nih.gov/pubmed/32722649 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13153326 |
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