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Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering

[Image: see text] Group IV monochalcogenides exhibit spontaneous polarization and ferroelectricity, which are important in photovoltaic materials. Since strain engineering plays an important role in ferroelectricity, in the present work, the effect of equibiaxial strain on the band structure and shi...

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Detalhes bibliográficos
Publicado no:ACS Omega
Main Authors: Kaner, Ngeywo Tolbert, Wei, Yadong, Jiang, Yingjie, Li, Weiqi, Xu, Xiaodong, Pang, Kaijuan, Li, Xingji, Yang, Jianqun, Jiang, YongYuan, Zhang, Guiling, Tian, Wei Quan
Formato: Artigo
Idioma:Inglês
Publicado em: American Chemical Society 2020
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7376894/
https://ncbi.nlm.nih.gov/pubmed/32715206
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.0c01319
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