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Bond-breaking induced Lifshitz transition in robust Dirac semimetal VAI(3)
Topological electrons in semimetals are usually vulnerable to chemical doping and environment change, which restricts their potential application in future electronic devices. In this paper, we report that the type-II Dirac semimetal [Formula: see text] hosts exceptional, robust topological electron...
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| Publicado no: | Proc Natl Acad Sci U S A |
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| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Academy of Sciences
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7355027/ https://ncbi.nlm.nih.gov/pubmed/32554603 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1917697117 |
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