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Bond-breaking induced Lifshitz transition in robust Dirac semimetal VAI(3)

Topological electrons in semimetals are usually vulnerable to chemical doping and environment change, which restricts their potential application in future electronic devices. In this paper, we report that the type-II Dirac semimetal [Formula: see text] hosts exceptional, robust topological electron...

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Detalhes bibliográficos
Publicado no:Proc Natl Acad Sci U S A
Main Authors: Liu, Yiyuan, Liu, Yu-Fei, Gui, Xin, Xiang, Cheng, Zhou, Hui-Bin, Hsu, Chuang-Han, Lin, Hsin, Chang, Tay-Rong, Xie, Weiwei, Jia, Shuang
Formato: Artigo
Idioma:Inglês
Publicado em: National Academy of Sciences 2020
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7355027/
https://ncbi.nlm.nih.gov/pubmed/32554603
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1917697117
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