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Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device

In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA(0.75)MA(0.25))(1-x)Cs(x)PbI(3) (x = 0–0.1) is demonstrated to exhibit bipolar resistive...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
में प्रकाशित:Nanomaterials (Basel)
मुख्य लेखकों: Hsiao, Yuan-Wen, Wang, Shi-Yu, Huang, Cheng-Liang, Leu, Ching-Chich, Shih, Chuan-Feng
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: MDPI 2020
विषय:
ऑनलाइन पहुंच:https://ncbi.nlm.nih.gov/pmc/articles/PMC7353342/
https://ncbi.nlm.nih.gov/pubmed/32545543
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10061155
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