Li, J., Meng, C., Yu, L., Li, Y., Yan, F., Han, P., & Ji, X. (2020). Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions. Micromachines (Basel).
Chicago Style CitationLi, Jinlan, Chenxu Meng, Le Yu, Yun Li, Feng Yan, Ping Han, i Xiaoli Ji. "Effect of Various Defects On 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions." Micromachines (Basel) 2020.
Cita MLALi, Jinlan, et al. "Effect of Various Defects On 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions." Micromachines (Basel) 2020.
Atenció: Aquestes cites poden no estar 100% correctes.