Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO(3)

Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (FTJs). Nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapi...

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Udgivet i:Sci Rep
Main Authors: Oshime, Norihiro, Kano, Jun, Ikenaga, Eiji, Yasui, Shintaro, Hamasaki, Yosuke, Yasuhara, Sou, Hinokuma, Satoshi, Ikeda, Naoshi, Janolin, Pierre-Eymeric, Kiat, Jean-Michel, Itoh, Mitsuru, Yokoya, Takayoshi, Fujii, Tatsuo, Yasui, Akira, Osawa, Hitoshi
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group UK 2020
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7329818/
https://ncbi.nlm.nih.gov/pubmed/32612212
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-67651-w
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