Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO(3)

Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (FTJs). Nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapi...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Oshime, Norihiro, Kano, Jun, Ikenaga, Eiji, Yasui, Shintaro, Hamasaki, Yosuke, Yasuhara, Sou, Hinokuma, Satoshi, Ikeda, Naoshi, Janolin, Pierre-Eymeric, Kiat, Jean-Michel, Itoh, Mitsuru, Yokoya, Takayoshi, Fujii, Tatsuo, Yasui, Akira, Osawa, Hitoshi
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2020
Assuntos:
Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7329818/
https://ncbi.nlm.nih.gov/pubmed/32612212
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-67651-w
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados