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Evaluating the Thermoelectric Properties of BaTiS(3) by Density Functional Theory

[Image: see text] BaTiS(3) is a semiconductor with a small bandgap of ∼0.5 eV and strong transport anisotropy caused primarily by structural anisotropy; it contains well-separated octahedral columns along the [0001] direction and low lattice thermal conductivity, appealing for thermoelectric applica...

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Detalhes bibliográficos
Publicado no:ACS Omega
Main Authors: Paudel, Tula R., Tsymbal, Evgeny Y.
Formato: Artigo
Idioma:Inglês
Publicado em: American Chemical Society 2020
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7271404/
https://ncbi.nlm.nih.gov/pubmed/32548422
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.0c01139
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