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Structural Transitions in Ge(2)Sb(2)Te(5) Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses
Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms...
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| Publicado en: | Materials (Basel) |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2020
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7254329/ https://ncbi.nlm.nih.gov/pubmed/32369916 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13092082 |
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