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Ultrafast Laser Writing Deep inside Silicon with THz-Repetition-Rate Trains of Pulses
Three-dimensional laser writing inside silicon remains today inaccessible with the shortest infrared light pulses unless complex schemes are used to circumvent screening propagation nonlinearities. Here, we explore a new approach irradiating silicon with trains of femtosecond laser pulses at repetit...
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| Veröffentlicht in: | Research (Wash D C) |
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| Hauptverfasser: | , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
AAAS
2020
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7245002/ https://ncbi.nlm.nih.gov/pubmed/32510057 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.34133/2020/8149764 |
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