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Temperature-dependent infrared ellipsometry of Mo-doped VO(2) thin films across the insulator to metal transition
We present a spectroscopic ellipsometry study of Mo-doped VO(2) thin films deposited on silicon substrates for the mid-infrared range. The dielectric functions and conductivity were extracted from analytical fittings of Ψ and Δ ellipsometric angles showing a strong dependence on the dopant concentra...
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| הוצא לאור ב: | Sci Rep |
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| Main Authors: | , , , , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group UK
2020
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7244498/ https://ncbi.nlm.nih.gov/pubmed/32444609 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-65279-4 |
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