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Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS(2)

If a material with an odd number of electrons per unit-cell is insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS(2), which has a low-temperature insulating phase comprising charge order clusters with 13 unpaired orbitals each. But...

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Detalhes bibliográficos
Publicado no:Nat Commun
Main Authors: Butler, C. J., Yoshida, M., Hanaguri, T., Iwasa, Y.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2020
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7235044/
https://ncbi.nlm.nih.gov/pubmed/32424136
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-16132-9
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