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A Poly Resistor Based Time Domain CMOS Temperature Sensor with 9b SAR and Fine Delay Line
This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CM...
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| Publicado no: | Sensors (Basel) |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7180752/ https://ncbi.nlm.nih.gov/pubmed/32268513 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s20072053 |
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