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Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the pr...

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Bibliografski detalji
Izdano u:Molecules
Glavni autori: Jewel, Mohi Uddin, Monne, Mahmuda Akter, Mishra, Bhagyashree, Chen, Maggie Yihong
Format: Artigo
Jezik:Inglês
Izdano: MDPI 2020
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7179098/
https://ncbi.nlm.nih.gov/pubmed/32121080
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/molecules25051081
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