High mobility approaching the intrinsic limit in Ta-doped SnO(2) films epitaxially grown on TiO(2) (001) substrates

Achieving high mobility in SnO(2), which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. In this study, we investigated the transport properties of lightly Ta-doped SnO(2) (Sn(1...

Ful tanımlama

Kaydedildi:
Detaylı Bibliyografya
Yayımlandı:Sci Rep
Asıl Yazarlar: Fukumoto, Michitaka, Nakao, Shoichiro, Shigematsu, Kei, Ogawa, Daisuke, Morikawa, Kazuo, Hirose, Yasushi, Hasegawa, Tetsuya
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Nature Publishing Group UK 2020
Konular:
Article
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC7176643/
https://ncbi.nlm.nih.gov/pubmed/32321972
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-63800-3
Etiketler: Etiketle
Etiket eklenmemiş, İlk siz ekleyin!

Benzer Materyaller