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Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-...
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| Publicado en: | Materials (Basel) |
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| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2020
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7142779/ https://ncbi.nlm.nih.gov/pubmed/32204482 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13061400 |
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