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Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling
The absence of a band gap in graphene is a hindrance to its application in electronic devices. Alternately, the complete replacement of carbon atoms with B and N atoms in graphene structures led to the formation of hexagonal boron nitride (h-BN) and caused the opening of its gap. Now, an exciting po...
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| Publicado no: | Materials (Basel) |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7084880/ https://ncbi.nlm.nih.gov/pubmed/32106402 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13051026 |
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