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Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing
Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum wel...
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| Publicado en: | Light Sci Appl |
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| Autores principales: | , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7078256/ https://ncbi.nlm.nih.gov/pubmed/32194957 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41377-020-0279-y |
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